活动简介
本次研讨会将聚焦热扫描探针光刻(t-SPL)技术,结合前沿科研应用与实际操作演示,深入探讨其在纳米制造及纳米原位改性中的最新进展。
通过专题报告与现场演示,参会者将全面了解 NanoFrazor 的热扫描探针光刻技术,并探索其在不同研究领域中的应用潜力。本次会议特别邀请了来自前沿研究机构的专家学者,分享扫描探针技术在新兴领域中的最新研究成果与应用进展。。
特邀报告人
Prof. Dr. Xiaorui Zheng (Westlake University)
Opportunities of Thermal Probe in Neuromorphic Devices
Abstract: Since the inventions of scanning tunneling microscope and atomic force microscope in 1980s, nanoscale imaging and manipulation capabilities have been greatly revolutionized. Particularly, scanning probe lithography has emerged as alternative subtractive/additive nanofabrication approaches, such as dip-pen nanolithography and thermal probe lithography. At Westlake University, our group investigates the fundamentals and applications of scanning probe technology and demonstrates unique phenomena and functional nanodevices for neuromorphic computing. In this presentation, I will introduce our recent findings in scanning probe-based fabrication, in-situ characterization and manipulation of novel materials and platforms. Unique phenomena and functional nanodevices in electronics and photonics have been achieved for neuromorphic computing, such as resistive switching, low-dimensional ferroelectrics, logic-in-memory, and dynamic light-matter interactions.
Dr. Jialiang Gao (Heidelberg Instruments Nano)
Thermal Scanning Probe Lithography with NanoFrazor : Principle and Applications
Abstract: Thermal scanning probe lithography (t-SPL), enabled by the NanoFrazor, is a direct-write nanolithography technique that employs an ultrasharp thermal tip for simultaneous patterning and inspection of nanoscale structures with high precision. Based on localized thermal decomposition of a resist material, t-SPL enables high-resolution, proximity-effect-free patterning, while integrated topography sensing provides in-situ imaging and closed-loop feedback for nanometer-scale accuracy. In this talk, I will provide an overview of how the unique capabilities of the NanoFrazor enable a range of novel applications. First, from a lithography perspective, I will present examples including nanometer-precision grayscale patterning for advanced photonic structures, and the integration of mix-and-match lithography with markerless overlay for complex low-dimensional devices. In the second part, I will highlight how t-SPL enables localized thermomechanical modification of materials, allowing deterministic tuning of structural and functional properties. Together, these capabilities establish t-SPL as a versatile platform for photonic, optoelectronic, and quantum technologies.
Zhecheng Sun (Westlake University)
Thermal Fabrication of Submicron Single -Crystal Devices Based on Crystalline Porous Materials
Abstract: Crystalline porous materials combine periodic structures, designable pore environments, tunable electronic structures, and rich spin/charge degrees of freedom, making them ideal platforms for exploring molecular quantum devices, chemical sensing, and low-dimensional quantum phenomena. However, these materials often exist as micron- or even submicron-sized single crystals and are frequently sensitive to air, solvents, electron-beam irradiation, or thermal processing, which makes it challenging to fabricate high-quality devices using conventional micro- and nanofabrication methods. To address this challenge, this report focuses on the fabrication of submicron single-crystal devices based on crystalline porous materials and introduces low-damage device-fabrication strategies tailored for single-crystalline porous materials. By achieving controllable electrode integration on individual submicron crystals, this approach may enable direct correlations among crystal structure, pore environment, radical/metal centers, spin dynamics, and charge-transport behavior. This research not only provides a methodological foundation for single-crystal electrical measurements, but also supports future studies of molecular quantum sensing, electronic spin control, heterostructures, and emerging quantum phenomena. Ultimately, it offers a technical pathway for transforming crystalline porous materials from synthetic targets into measurable, controllable, and integrable porous quantum devices.
Yuanyuan Qiu (ShanghaiTech University)
Core–Shell Quantum Dot-Enabled MoS2 Memories and Nanoscaling Outlook
Abstract: Low-dimensional nonvolatile memories require stable charge storage, high endurance, and scalable device architectures. In this talk, I will present our recent work on monolayer MoS2 memories enabled by CdSe@CdS-RNH2 core–shell quantum dots. The quantum dots serve as discrete charge-storage centers, while ligand and shell engineering suppress interfacial defects and regulate charge transfer. Electrical measurements reveal a cascaded MoS2→ CdS → CdSe pathway, where charges are first captured near the CdS shell and then stored in the CdSe core through Fowler–Nordheim tunneling. The device shows a large memory window, high on/off ratio, and excellent cycling stability. Finally, I will present an outlook toward nanoscale quantum-dot memory devices enabled by scanning probe lithography. By using Si-PPA/SPL to define sub-100 nm graphene nanochannels or nanotraps, it may be possible to achieve single-quantum-dot memory cells. This strategy would provide a route to controllable trap density, short-channel scaling, and future neuromorphic or multilevel memory applications based on 0D–2D heterostructures.
研讨会日程
2026年5月13日 | 杭州西湖区万怡酒店(杭州市西湖区墩余路600号)
09:00 - 09:30
Registration
09:30 - 09:40
Welcome Remarks
09:40 - 10:10
Jialiang Gao
Thermal Scanning Probe Lithography with NanoFrazor : Principle and Applications
10:10 - 10:40
Zhecheng Sun
Thermal Fabrication of Submicron Single -Crystal Devices Based on Crystalline Porous Materials
10:40- 11:00
Break
11:00 - 11:30
Yuanyuan Qiu
Core–Shell Quantum Dot-Enabled MoS2 Memories and Nanoscaling Outlook
11:30 - 12:00
Open for Discussion
12:00 - 13:30
Lunch
13:30 - 14:10
Xiaorui Zheng
Opportunities of Thermal Probe in Neuromorphic Devices
14:10 - 14:40
PAL Team (Heidelberg
Instruments Nano)
Live Demo with NanoFrazor
14:40 - 15:10
Break
15:10 - 15:20
Zhengming Wu (Heidel-
berg Instruments Nano)
Closing Remarks
注:会议日程可能根据实际情况进行调整



